Application:
High-purity tungsten targets, high-purity tungsten-titanium alloy targets, and tungsten-silicon composite targets are usually applied by magnetron sputtering to produce various complex and high-performance thin film materials. Because high-purity tungsten or ultra-pure tungsten (5 N or 6 N) has high resistance to electron migration, high temperature stability, and the ability to form stable silicides, it is often used as a thin film in the electronics industry as a gate, connection, transition and Barrier metal. Ultra-high-purity tungsten and its silicides are also used in ultra-large-scale integrated circuits as resistance layers, diffusion barriers, etc., and as gate materials and connection materials in metal oxide semiconductor transistors. Tungsten-titanium alloy sputtering targets are often used to make transition metal layers of thin-film solar cells.
Specification:
|
Name
|
Molecular formula |
Specification |
Size
|
Relative density |
Grain size |
Defect rate |
| Tungsten target |
W
|
4N(99.99%)
|
Inch |
mm
|
≥99%
|
≯50µm
|
0
|
|
5N(99.999%)
|
D(6,8,10,12)
H(0.25,0.5,0.75)
|
Diameter 150～350
Thickness 6～25
|
| Tungsten Titanium Target |
|
4N(99.99%)
|
≥99%
|
≯50µm
|
0
|
|
4N5(99.995%)
|
